參數(shù)資料
型號(hào)： HS1-65647RH
廠商： HARRIS SEMICONDUCTOR
元件分類： DRAM
英文描述： Radiation Hardened 8K x 8 SOS CMOS Static RAM
中文描述： 8K X 8 STANDARD SRAM, 50 ns, CDIP28
文件頁數(shù)： 1/16頁
文件大?。?/td> 110K
代理商： HS1-65647RH
824
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HS-65647RH
Radiation Hardened
8K x 8 SOS CMOS Static RAM
Functional Diagram
TRUTH TABLE
E1
E2
G
W
MODE
X
0
X
X
Low Power Standby
1
1
X
X
Disabled
0
1
1
1
Enabled
0
1
0
1
Read
0
1
X
0
Write
AI COL
AI
ROW
I/O0
I/O7
128 X 512
MEMORY ARRAY
ROW
DECODER
INPUT
DATA
CIRCUIT
COLUMN DECODER
COLUMN I/O
W
G
E1
E2
CONTROL
CIRCUIT
Features
1.2 Micron Radiation Hardened SOS CMOS
- Total Dose 3 x 10
5
RAD (Si)
- Transient Upset >1 x 10
11
RAD (Si)/s
- Single Event Upset < 1 x 10
-12
Errors/Bit-Day
Latch-up Free
LET Threshold >250 MEV/mg/cm2
Low Standby Supply Current 10mA (Max)
Low Operating Supply Current 100mA (2MHz)
Fast Access Time 50ns (Max), 35ns (Typ)
High Output Drive Capability
Gated Input Buffers (Gated by E2)
Six Transistor Memory Cell
Fully Static Design
Asynchronous Operation
CMOS Inputs
5V Single Power Supply
Military Temperature Range -55
o
C to +125
o
C
Industry Standard JEDEC Pinout
Description
The Intersil HS-65647RH is a fully asynchronous 8K x 8
radiation hardened static RAM. This RAM is fabricated using
the Intersil 1.2 micron silicon-on-sapphire CMOS technology.
This technology gives exceptional hardness to all types of
radiation, including neutron fluence, total ionizing dose, high
intensity ionizing dose rates, and cosmic rays.
Low power operation is provided by a fully static design. Low
standby power can be achieved without pull-up resistors,
due to the gated input buffer design.
August 1995
Spec Number
518729
File Number
2928.2
D
Ordering Information
PART NUMBER
TEMPERATURE RANGE
PACKAGE
HS1-65647RH-Q
-55
o
C to +125
o
C
28 Lead SBDIP
HS1-65647RH-8
-55
o
C to +125
o
C
28 Lead SBDIP
HS1-65647RH/Proto
-55
o
C to +125
o
C
28 Lead SBDIP
HS1-65647RH/Sample
+25
o
C
28 Lead SBDIP
HS9-65647RH-Q
-55
o
C to +125
o
C
28 Lead Ceramic Flatpack
HS9-65647RH-8
-55
o
C to +125
o
C
28 Lead Ceramic Flatpack
HS9-65647RH/Proto
-55
o
C to +125
o
C
28 Lead Ceramic Flatpack
HS9-65647RH/Sample
+25
o
C
28 Lead Ceramic Flatpack
HS9A-65647RH-Q
-55
o
C to +125
o
C
36 Lead Ceramic Flatpack
相關(guān)PDF資料
PDF描述
HS9-65647RH Radiation Hardened 8K x 8 SOS CMOS Static RAM
HS9A-65647RH-Q Radiation Hardened 8K x 8 SOS CMOS Static RAM
HS1-65647RH-Q Radiation Hardened 8K x 8 SOS CMOS Static RAM
HS9-65647RH-Q Radiation Hardened 8K x 8 SOS CMOS Static RAM
HS1-82C52RH-8 UART
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HS1-65647RH/PROTO 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened 8K x 8 SOS CMOS Static RAM
HS1-65647RH-8 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened 8K x 8 SOS CMOS Static RAM
HS1-65647RH-Q 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened 8K x 8 SOS CMOS Static RAM
HS1-6564RH-8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Synchronous SRAM Module
HS16-5N 功能描述:旋鈕開關(guān) 12 AMP 5P 2-11 POS RoHS:否 制造商:C&K Components 位置數(shù)量:5 卡片組數(shù)量: 每卡片組極數(shù):2 電流額定值:250 mA 電壓額定值:125 V 指數(shù)角: 觸點(diǎn)類型: 觸點(diǎn)形式:DPST 端接類型:Solder 安裝類型:Panel 觸點(diǎn)電鍍:Silver
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