參數(shù)資料
型號: HS-565ARH-T
廠商: Intersil Corporation
英文描述: Radiation Hardened High Speed, Monolithic Digital-to-Analog Converter(抗輻射高速數(shù)模轉(zhuǎn)換器)
中文描述: 輻射硬化高速,單片數(shù)字模擬轉(zhuǎn)換器(抗輻射高速數(shù)模轉(zhuǎn)換器)
文件頁數(shù): 6/6頁
文件大?。?/td> 108K
代理商: HS-565ARH-T
6
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Die Characteristics
DIE DIMENSIONS:
(2718
μ
m x 4547
μ
m x 483
μ
m
±
25.4
μ
m)
107 x 179 x 19mils
±
1mil
METALLIZATION:
Type: Al Si Cu
Thickness: 16.0k
±
2k
SUBSTRATE POTENTIAL:
Tie substrate to reference ground
BACKSIDE FINISH:
Silicon
PASSIVATION:
Type: Silox (S
i
O
2
)
Thickness: 8k
±
1k
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm
2
TRANSISTOR COUNT:
200
PROCESS:
Bipolar, Dielectric Isolation
Metallization Mask Layout
HS-565ARH-T
V
CC
3
(MSB)
BIT 1
BIT 2
BIT 3
BIT 4
BIT 5
BIT 6
BIT 7
BIT 8
BIT 9
BIT 10
BIT 11
BIT 12
(LSB)
POWER
GND
20V
SPAN
10V
SPAN
IDAC
OUT
BIPOLAR
R
IN
-V
EE
V
REF
IN
V
REF
GND
V
REF
OUT
HS-565ARH-T
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