
HI-SINCERITY
MICROELECTRONICS CORP.
HMPSA43
NPN SILICON TRANSISTOR
Spec. No. : HE6334-B
Issued Date : 1992.11.18
Revised Date : 2000.10.01
Page No. : 1/3
HSMC Product Specification
Description
The HMPSA43 is high voltage transistor.
Features
High Collector-Emitter Breakdown Voltage
Low Collector-Emitter Saturation Voltage
For Complementary Use with PNP Type HMPSA93
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ...................................................................................... 200 V
VCEO Collector to Emitter Voltage................................................................................... 200 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ...................................................................................................... 500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
200
200
6
-
-
-
-
25
40
40
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
350
900
-
-
-
-
4
Unit
V
V
V
nA
nA
mV
mV
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=200V, IE=0
VEB=6V, IC=0
IC=20mA, IB=2mA
IC=20mA, IB=2mA
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=30mA, VCE=10V
IC=10mA, VCE=20V, f=100MHZ
VCB=20V, f=1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE2 & V
CE(sat)
Rank
NS
N
hFE1
>
80
>
25
hFE2
>
120
>
40
hFE3
>
120
>
40
VCE(sat)
<
200mV
<
350mV