
HI-SINCERITY
MICROELECTRONICS CORP.
HMPSA55
PNP SILICON TRANSISTOR
Spec. No. : HE6310-B
Issued Date : 1992.09.09
Revised Date : 2000.10.01
Page No. : 1/4
HSMC Product Specification
Description
The HMPSA55 is designed for using in a amplifier applications.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ....................................................................................... -60 V
VCEO Collector to Emitter Voltage.................................................................................... -60 V
VEBO Emitter to Base Voltage ............................................................................................ -4 V
IC Collector Current ..................................................................................................... -500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Min.
-60
-60
-4
-
-
-
-
50
50
50
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-0.25
-1.2
-
-
-
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-100uA, IC=0
VCB=-60V, IE=0
VCE=-60V, IB=0
IC=-100mA, IB=-10mA
IC=-100mA, VCE=-1V
IC=-10mA, VCE=-1V
IC=-100mA, VCE=-1V
IC=-100mA, VCE=-1V, f=1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz