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參數(shù)資料
| 型號： | HMPSA64 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP SILICON TRANSISTOR |
| 中文描述： | 進步黨硅晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 38K |
| 代理商： | HMPSA64 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMPSA64
PNP SILICON TRANSISTOR
Spec. No. : HE6333-B
Issued Date : 1992.11.18
Revised Date : 2000.10.01
Page No. : 1/4
HSMC Product Specification
Description
The HMPSA64 is designed for application requiring extremely high
current gain at collector currents to 500mA.
Features
High D.C Current Gain
For Complementary Use with NPN Type HMPSA14
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ....................................................................................... -30 V
VCEO Collector to Emitter Voltage.................................................................................... -30 V
VEBO Emitter to Base Voltage .......................................................................................... -10 V
IC Collector Current...................................................................................................... -500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Min.
-30
-30
-10
-
-
-
-
10
20
125
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-1.5
-2
-
-
-
Unit
V
V
V
nA
nA
V
V
K
K
pF
Test Conditions
IC=-100uA, IE=0
IC=-100uA, IB=0
IE=-10uA, IC=0
VCB=-30V, IE=0
VEB=-10V, IC=0
IC=-100mA, IB=-0.1mA
IC=-100mA, VCE=-5V
IC=-10mA, VCE=-5V
IC=-100mA, VCE=-5V
IC=-100mA, VCE=-5V, f=100MHZ
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
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