參數(shù)資料
型號(hào)： HMPSA56
廠商： HSMC CORP.
英文描述： PNP SILICON TRANSISTOR
中文描述： 進(jìn)步黨硅晶體管
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 38K
代理商： HMPSA56
HI-SINCERITY
MICROELECTRONICS CORP.
HMPSA56
PNP SILICON TRANSISTOR
Spec. No. : HE6311
Issued Date : 1992.09.09
Revised Date : 2001.03.15
Page No. : 1/4
HMPSA56
HSMC Product Specification
Description
Amplifier transistor
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ....................................................................................... -80 V
VCEO Collector to Emitter Voltage.................................................................................... -80 V
VEBO Emitter to Base Voltage ............................................................................................ -4 V
IC Collector Current ..................................................................................................... -500 mA
IC Collector Current (Pulse)........................................................................................ -1000 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Min.
-80
-80
-4
-
-
-
-
50
50
50
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-0.25
-1.2
-
-
-
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-100uA, IC=0
VCB=-80V, IE=0
VCE=-60V, IB=0
IC=-100mA, IB=-10mA
IC=-100mA, VCE=-1V
IC=-10mA, VCE=-1V
IC=-100mA, VCE=-1V
IC=-100mA, VCE=-1V, f=1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
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