
HI-SINCERITY
MICROELECTRONICS CORP.
HMPSA13
NPN SILICON DARLINGTON TRANSISTOR
Spec. No. : HE6343
Issued Date : 1993.03.24
Revised Date : 2001.05.01
Page No. : 1/4
HMPSA13
HSMC Product Specification
Description
The HMPSA13 is designed for applications requiring extremely high
current gain at collector to 500mA.
Features
High D.C. Current Gain
Complementary to HMPSA63
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 600 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ........................................................................................ 30 V
VCES Collector to Emitter Voltage...................................................................................... 30 V
VEBO Emitter to Base Voltage ........................................................................................... 10 V
IC Collector Current....................................................................................................... 500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
30
30
10
-
-
-
-
5
10
-
125
-
Typ.
-
-
-
-
-
-
1.0
-
-
50
-
-
Max.
-
-
-
100
100
1.5
-
-
-
-
-
6
Unit
V
V
V
nA
nA
V
V
K
K
K
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=100uA, VBE=0
IE=10uA, IC=0
VCB=30V, IE=0
VEB=10V, IC=0
IC=100mA, IB=0.1mA
IC=500mA, IB=0.5mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=500mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
Classification Of hFE3
Rank
SUN
N
VCE(sat)2
<
1.2V
VCE(sat)2
hFE3
>
20K
hFE3