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參數(shù)資料
| 型號： | HMPSA27 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN SILICON TRANSISTOR |
| 中文描述： | NPN硅晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 32K |
| 代理商： | HMPSA27 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMPSA27
NPN SILICON TRANSISTOR
Spec. No. : HE6332
Issued Date : 1995.05.18
Revised Date : 2002.04.11
Page No. : 1/3
HMPSA27
HSMC Product Specification
Description
The HMPSA27 is designed for darlington amplifier high current gain
collector current to 500mA.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 60 V
VCES Collector to Emitter Voltage ...................................................................................... 60 V
VEBO Collector to Emitter Voltage...................................................................................... 10 V
IC Collector Current........................................................................................................ 500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
ICES
*VCE(sat)
VBE(on)
*hFE1
*hFE2
Min.
60
60
10
-
-
-
-
-
10K
10K
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
500
1.5
2
-
-
Unit
V
V
V
nA
nA
nA
V
V
Test Conditions
IC=100uA, IE=0
IC=100uA, VBE=0
IE=10uA, IC=0
VCB=50V, IE=0
VEB=10V, IC=0
VCE=50V
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
TO-92
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