
HI-SINCERITY
MICROELECTRONICS CORP.
HMPSA26
NPN SILICON TRANSISTOR
Spec. No. : HE6308-B
Issued Date : 1992.09.09
Revised Date : 2000.10.01
Page No. : 1/3
HSMC Product Specification
Description
The HMPSA26 is designed for using in darligton transistor.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ........................................................................................ 50 V
VCES Collector to Emitter Voltage...................................................................................... 50 V
VEBO Emitter to BASE Voltage.......................................................................................... 10 V
IC Collector Current....................................................................................................... 500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
ICES
IEBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
Min.
50
50
10
-
-
-
-
-
10K
10K
Typ.
-
-
-
-
-
-
-
0.6
-
-
Max.
-
-
-
100
500
100
1.5
2
-
-
Unit
V
V
V
nA
nA
nA
V
V
Test Conditions
IC=100uA, IE=0
IC=100uA, VBE=0
IE=10uA, IC=0
VCB=40V, IE=0
VCE=40V, VBE=0
VEB=10V, IC=0
IC=100mA, IB=100uA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%