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參數(shù)資料
| 型號： | HMPSA14 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN SILICON TRANSISTOR |
| 中文描述： | NPN硅晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 36K |
| 代理商： | HMPSA14 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMPSA14
NPN SILICON TRANSISTOR
Spec. No. : HE6305
Issued Date : 1992.09.09
Revised Date : 2002.02.21
Page No. : 1/4
HMPSA14
HSMC Product Specification
Description
The HMPSA14 is designed for applications requiring extremely high
current gain collector current to 500mA.
Features
High D.C current Gain
HMPSA14 Complementary to HMPSA64
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 30 V
VCES Collector to Emitter Voltage ...................................................................................... 30 V
VEBO Emitter to Base Voltage............................................................................................ 10 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
30
30
10
-
-
-
-
10K
20K
125
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
1.5
2
-
-
-
6
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=100uA, IE=0
IC=0.1mA, VBE=0
IE=10uA, IC=0
VCB=30V, IE=0
VEB=10V, IC=0
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
IC=10mA, VCE=5V
IC=100mA, VCE=5V
IC=10mA, VCE=5V, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
TO-92
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