參數(shù)資料
型號： HMBT28S
廠商： HSMC CORP.
英文描述： NPN EPITAXIAL PLANAR TRANSISTOR
中文描述： 瑞展晶體管
文件頁數(shù)： 1/4頁
文件大小： 50K
代理商： HMBT28S
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT28S
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HN200213
Issued Date : 2002.08.01
Revised Date : 2004.09.01
Page No. : 1/4
HM28S
HSMC Product Specification
Description
The HMBT28S is a NPN silicon transistor, designed for use in general-purpose
SPEECH SYNTHSIZER (Voice Rom) IC audio output driver stage amplifier
applications.
Features
Excellent hFE Linearity
High DC Current Gain
High Power Dissipation
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°
C
Junction Temperature..................................................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25
°
C)............................................................................................................... 225 mW
Maximum Voltages and Currents (T
=25
°
C)
V
CBO
Collector to Base Voltage ........................................................................................................................... 40 V
V
CEO
Collector to Emitter Voltage........................................................................................................................ 20 V
V
EBO
Emitter to Base Voltage................................................................................................................................ 6 V
I
C
I
B
Base Current .................................................................................................................................................. 0.4 A
Electrical Characteristics
(T
A
=25
°
C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE1
*h
FE2
h
FE3
h
FE4
f
T
Cob
Min.
40
20
6
-
-
-
290
300
300
300
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
9
Max.
-
-
-
100
100
0.55
-
1000
-
-
-
-
Unit
V
V
V
nA
nA
V
Test Conditions
I
C
=100uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100uA, I
C
=0
V
CB
=35V, I
E
=0
V
EB
=6V, I
C
=0
I
C
=600mA, I
B
=20mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=0.1A
V
CE
=1V, I
C
=0.3A
V
CE
=1V, I
C
=0.5A
V
CE
=10V, I
C
=50mA, f=1MHz
V
CB
=10V, f=1MHz, I
E
=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification of hFE2
Rank (Marking Code)
Range
B (3FB)
300-550
C (3FC)
500-700
D (3FD)
650-1000
SOT-23
相關PDF資料
PDF描述
HMBT2907 PNP EPITAXIAL PLANAR TRANSISTOR
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