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參數(shù)資料
| 型號： | HM658512AI |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4 M PSRAM (512-kword ×8-bit)(4 M PSRAM (512k字 ×8位)) |
| 中文描述： | 4個(gè)M移動存儲芯片（512 KWord的× 8位）（4個(gè)M移動存儲芯片（為512k字× 8位）） |
| 文件頁數(shù)： | 6/18頁 |
| 文件大小： | 129K |
| 代理商： | HM658512AI |
HM658512AI Series
6
DC Characteristics
Parameter
Symbol Min
Typ
Max Unit Test conditions
Notes
Operating power supply current I
CC1
Standby power supply current
—
—
75
mA
I
I/O
= 0 mA, t
cyc
= min
CE
= V
, Vin
≥
0 V
OE
/
RFSH
= V
IH
CE
≥
V
– 0.2 V, Vin
≥
0 V,
OE
/
RFSH
≥
V
CC
– 0.2 V
CE
= V
, Vin
≥
0 V,
OE
/
RFSH
= V
IL
CE
≥
V
– 0.2 V, Vin
≥
0 V,
OE
/
RFSH
≤
0.2 V
I
SB1
—
1
2
mA
I
SB2
—
20
200
μ
A
Operating power supply current
in self refresh mode
I
CC2
—
1
2
mA
I
CC3
—
70
200
μ
A
Input leakage current
I
LI
I
LO
–10
—
10
μ
A
μ
A
V
CC
= 5.5 V, Vin = V
SS
to V
CC
OE
/
RFSH
= V
IH
V
I/O
= V
SS
to V
CC
I
OL
= 2.1 mA
I
OH
= –1 mA
Output leakage current
–10
—
10
Output voltage
V
OL
V
OH
—
—
0.4
V
2.4
—
—
V
Capacitance
(Ta = 25
°
C, f = 1 MHz)
Parameter
Symbol
Typ
Max
Unit
Test conditions
Input capacitance
C
in
C
I/O
—
8
pF
V
in
= 0 V
V
I/O
= 0 V
Input /output capacitance
Note : This parameter is sampled and not 100% tested.
—
10
pF
AC Characteristics
(Ta = –40 to +85
°
C, V
CC
= 5 V
±
10%, unless otherwise noted.)
Test Conditions
Input pulse levels: 0.4 V, 2.8 V
Input rise and fall time: 5 ns
Timing measurement level: 0.8 V, 2.2 V
Reference levels: V
OH
= 2.0 V, V
OL
= 0.8 V
Output load: 1 TTL Gate and C
L
(100 pF) (Including scope and jig)
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HM658512ALFP-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4 M PSRAM (512-kword x 8-bit) 2 k Refresh |
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| HM658512ALFP-7 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4 M PSRAM (512-kword x 8-bit) 2 k Refresh |
| HM658512ALFP-7V | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4 M PSRAM (512-kword x 8-bit) 2 k Refresh |
| HM658512ALFP-8 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4 M PSRAM (512-kword x 8-bit) 2 k Refresh |
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