參數(shù)資料
型號: HM658512AI
廠商: Hitachi,Ltd.
英文描述: 4 M PSRAM (512-kword ×8-bit)(4 M PSRAM (512k字 ×8位))
中文描述: 4個M移動存儲芯片(512 KWord的× 8位)(4個M移動存儲芯片(為512k字× 8位))
文件頁數(shù): 5/18頁
文件大?。?/td> 129K
代理商: HM658512AI
HM658512AI Series
5
Operation Table
CE
OE
/
RFSH
WE
I/O
Operation
L
L
H
Dout
Read
L
×
L
High-Z
Write
L
H
H
High-Z
H
L
×
×
High-Z
Refresh
H
Note:
H
High-Z
Standby
H; V
IH
, L; V
IL
,
×
; V
IH
or V
IL
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Note
Terminal voltage with respect to V
SS
Power dissipation
V
T
P
T
Tstg
–1.0 to +7.0
V
1
1.0
W
Storage temperature range
–55 to +125
°
C
°
C
Storage temperature range under bias
Note:
1. With respect to V
SS
Tbias
–40 to +85
DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Notes
Supply voltage
V
CC
V
SS
V
IH
V
IL
Ta
4.5
5.0
5.5
V
0
0
0
V
Input high voltage
2.8
6.0
V
Input low voltage
–1.0
0.8
V
1
Ambient temperature range
Note:
1. V
IL
min = –3.0 V for pulse width 30 ns
–40
+85
°
C
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