參數(shù)資料
型號: HM62W8512BI
廠商: Hitachi,Ltd.
英文描述: 4 M SRAM (512-kword×8-bit)(4 M 靜態(tài)RAM(512k字×8位))
中文描述: 四米的SRAM(512 - KWord的× 8位)(4個(gè)M靜態(tài)隨機(jī)存儲(chǔ)器(為512k字× 8位))
文件頁數(shù): 4/12頁
文件大小: 59K
代理商: HM62W8512BI
HM62W8512BI Series
4
Absolute Maximum Ratings
Notes:
1.
–3.0 V for pulse half-width
30 ns
2.Maximum voltage is 4.6 V
Recommended DC Operating Conditions (Ta =
–40 to +85
°
C)
Note:
1.
–3.0 V for pulse half-width
30 ns
Parameter
Power supply voltage
Voltage on any pin relative to V
SS
Power dissipation
Operating temperature
Storage temperature
Storage temperature under bias
Symbol
V
CC
V
T
P
T
Topr
Tstg
Tbias
Value
–0.5 to +4.6
–0.5*
1
to V
CC
+ 0.5*
2
1.0
–40 to +85
–55 to +125
–40 to +85
Unit
V
V
W
°
C
°
C
°
C
Parameter
Supply voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.4
–0.3
*1
Typ
3.3
0
Max
3.6
0
V
CC
+ 0.3
0.6
Unit
V
V
V
V
Input high voltage
Input low voltage
相關(guān)PDF資料
PDF描述
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