參數(shù)資料
型號(hào): HM62W8511HCLJP-10
廠商: Renesas Technology Corp.
英文描述: BOX 5.0X1.85X1.0 W/CLP BLK
中文描述: 4分高速SRAM(512 - KWord的× 8位)
文件頁(yè)數(shù): 6/13頁(yè)
文件大?。?/td> 63K
代理商: HM62W8511HCLJP-10
HM62W8511HI Series
6
AC Characteristics
(Ta = –40 to +85
°
C, V
CC
= 3.3 V
±
0.3 V, unless otherwise noted.)
Test Conditions
Input pulse levels: 3.0 V/0.0 V
Input rise and fall time: 3 ns
Input and output timing reference levels: 1.5 V
Output load: See figures (Including scope and jig)
Dout
353
319
3.3 V
5 pF
Output load (B)
(for t
CLZ
, t
OLZ
, t
CHZ
, t
OHZ
, t
WHZ
, and t
OW
)
Dout
RL=50
Output load (A)
1.5 V
Zo=50
Read Cycle
HM62W8511HI
-15
Parameter
Symbol
Min
Max
Unit
Notes
Read cycle time
t
RC
t
AA
t
ACS
t
OE
t
OH
t
CLZ
t
OLZ
t
CHZ
t
OHZ
15
ns
Address access time
15
ns
Chip select access time
15
ns
Output enable to outpput valid
7
ns
Output hold from address change
3
ns
Chip select to output in low-Z
3
ns
1
Output enable to output in low-Z
0
ns
1
Chip deselect to output in high-Z
7
ns
1
Output disable to output in high-Z
7
ns
1
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