參數(shù)資料
型號: HM5113805F-6
廠商: Hitachi,Ltd.
英文描述: 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
中文描述: 128M的內(nèi)存江戶(16 Mword × 8位)8K的refresh/4k刷新
文件頁數(shù): 14/34頁
文件大小: 480K
代理商: HM5113805F-6
HM5112805F-6, HM5113805F-6
14
EDO Page Mode Cycle
HM5112805F/HM5113805F
-6
Parameter
Symbol
Min
Max
Unit
Notes
EDO page mode cycle time
EDO page mode
RAS
pulse width
Access time from
CAS
precharge
RAS
hold time from
CAS
precharge
Output data hold time from
CAS
low
CAS
hold time referred
OE
CAS
to
OE
setup time
t
HPC
t
RASP
t
CPA
t
CPRH
t
DOH
t
COL
t
COP
t
RCHC
25
ns
20
100000
ns
16
35
ns
9, 17
35
ns
3
ns
9, 22
10
ns
5
ns
Read command hold time from
CAS
precharge
Write pulse width during
CAS
precharge t
WPE
OE
precharge time
35
ns
10
ns
t
OEP
10
ns
EDO Page Mode Read-Modify-Write Cycle
HM5112805F/HM5113805F
-6
Parameter
Symbol
Min
Max
Unit
Notes
EDO page mode read-modify-write
cycle time
WE
delay time from
CAS
precharge
t
HPRWC
68
ns
t
CPW
54
ns
14
Refresh
(HM5112805F)
Parameter
Symbol
Max
Unit
Notes
Refresh period
t
REF
t
REF
64
ms
8192 cycles
Refresh period (L-version)
64
ms
8192 cycles
Refresh
(HM5113805F)
Parameter
Symbol
Max
Unit
Notes
Refresh period
t
REF
t
REF
64
ms
4096 cycles
Refresh period (L-version)
64
ms
4096 cycles
相關PDF資料
PDF描述
HM5113805FLTD-6 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5113805FTD-6 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5112805F 128M EDO DRAM(128M 擴展數(shù)據(jù)輸出模式動態(tài)RAM)
HM5113805F 128 M EDO(Extended Data Output) DRAM(128M 擴展數(shù)據(jù)輸出模式動態(tài)RAM)
HM5113165F 128M EDO DRAM(128M 擴展數(shù)據(jù)輸出模式動態(tài)RAM)
相關代理商/技術參數(shù)
參數(shù)描述
HM5113805FLTD-6 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5113805FTD-5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DRAM|EDO|16MX8|CMOS|TSOP|32PIN|PLASTIC
HM5113805FTD-6 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5113805LTD-6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM
HM5113805TD-5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM