參數(shù)資料
型號(hào): HM5113805F-6
廠商: Hitachi,Ltd.
英文描述: 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
中文描述: 128M的內(nèi)存江戶(16 Mword × 8位)8K的refresh/4k刷新
文件頁(yè)數(shù): 1/34頁(yè)
文件大?。?/td> 480K
代理商: HM5113805F-6
HM5112805F-6, HM5113805F-6
128M EDO DRAM (16-Mword
×
8-bit)
8k refresh/4k refresh
ADE-203-1050C (Z)
Rev. 3.0
Feb. 2, 2000
Description
The Hitachi HM5112805F, HM5113805F are 128M-bit dynamic RAMs organized as 16,777,216-word
×
8-bit. They have realized high performance and low power by employing CMOS process technology.
HM5112805F, HM5113805F offer Extended Data Out (EDO) Page Mode as a high speed access mode.
They are packaged in 32-pin plastic TSOPII.
Features
Single 3.3 V supply: 3.3 V
±
0.3 V
Access time: 60 ns (max)
Power dissipation
Active:
720 mW (max) (HM5112805F)
792 mW (max) (HM5113805F)
Standby : 3.6 mW (max) (CMOS interface)
: 1.8 mW (max) (CMOS interface) (L-version)
EDO page mode capability
Refresh cycles
RAS
-only refresh
8192 cycles/64 ms (HM5112805F)
4096 cycles/64 ms (HM5113805F)
CBR/Hidden refresh
4096 cycles/64 ms (HM5112805F, HM5113805F)
相關(guān)PDF資料
PDF描述
HM5113805FLTD-6 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5113805FTD-6 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5112805F 128M EDO DRAM(128M 擴(kuò)展數(shù)據(jù)輸出模式動(dòng)態(tài)RAM)
HM5113805F 128 M EDO(Extended Data Output) DRAM(128M 擴(kuò)展數(shù)據(jù)輸出模式動(dòng)態(tài)RAM)
HM5113165F 128M EDO DRAM(128M 擴(kuò)展數(shù)據(jù)輸出模式動(dòng)態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HM5113805FLTD-6 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5113805FTD-5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DRAM|EDO|16MX8|CMOS|TSOP|32PIN|PLASTIC
HM5113805FTD-6 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5113805LTD-6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM
HM5113805TD-5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM