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參數(shù)資料
| 型號(hào)： | HM5112805F-6 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
| 中文描述： | 128M的內(nèi)存江戶（16 Mword × 8位）8K的refresh/4k刷新 |
| 文件頁(yè)數(shù)： | 9/34頁(yè) |
| 文件大?。?/td> | 480K |
| 代理商： | HM5112805F-6 |
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HM5112805F-6, HM5113805F-6
9
DC Characteristics
(HM5113805F)
HM5113805F
-6
Parameter
Symbol
Min
Max
Unit
Test conditions
Operating current*
1,
*
2
I
CC1
I
CC2
—
220
mA
t
RC
= min
TTL interface
RAS
,
CAS
= V
IH
Dout = High-Z
Standby current
—
4
mA
—
1
mA
CMOS interface
RAS
,
CAS
≥
V
CC
– 0.2 V
Dout = High-Z
Standby current
(L-version)
I
CC2
—
500
μ
A
CMOS interface
RAS
,
CAS
≥
V
CC
– 0.2 V
Dout = High-Z
RAS
-only refresh current*
2
I
CC3
I
CC5
—
220
mA
t
RC
= min
RAS
= V
,
CAS
= V
IL
Dout = enable
Standby current*
1
—
10
mA
CAS
-before-
RAS
refresh current I
CC6
EDO page mode current*
1,
*
3
—
220
mA
t
RC
= min
RAS
= V
IL
,
CAS
cycle,
t
HPC
= t
HPC
min
CMOS interface
Dout = High-Z
CBR refresh: t
RC
= 15.6
μ
s
t
RAS
≤
0.3
μ
s
CMOS interface
RAS
,
CAS
≤
0.2 V
Dout = High-Z
I
CC7
—
200
mA
Battery backup current*
4
(Standby with CBR refresh)
(L-version)
I
CC10
—
2.5
mA
Self refresh mode current
(L-version)
I
CC11
—
1.6
mA
Input leakage current
I
LI
I
LO
–5
5
μ
A
μ
A
0 V
≤
Vin
≤
V
CC
+ 0.3 V
0 V
≤
Vout
≤
V
CC
Dout = disable
Output leakage current
–5
5
Output high voltage
V
OH
V
OL
2.4
V
CC
0.4
V
High Iout = –2 mA
Output low voltage
Notes: 1. I
depends on output load condition when the device is selected. I
CC
max is specified at the
output open condition.
2. Address can be changed once or less while
RAS
= V
IL
.
3. Measured with one sequential address change per EDO cycle, t
HPC
.
4. V
IH
≥
V
CC
– 0.2 V, 0 V
≤
V
IL
≤
0.2 V.
0
V
Low Iout = 2 mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM5112805FLTD-6 | 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
| HM5112805FTD-6 | 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
| HM5113805F-6 | 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
| HM5113805FLTD-6 | 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
| HM5113805FTD-6 | 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM5112805FLTD-6 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
| HM5112805FTD-5 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M EDO DRAM (16-Mword × 8-bit) 8k refresh/4k refresh |
| HM5112805FTD-6 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
| HM5112805LTD-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM |
| HM5112805TD-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM |
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