參數(shù)資料
型號: HM5112805F-6
廠商: Hitachi,Ltd.
英文描述: 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
中文描述: 128M的內(nèi)存江戶(16 Mword × 8位)8K的refresh/4k刷新
文件頁數(shù): 12/34頁
文件大?。?/td> 480K
代理商: HM5112805F-6
HM5112805F-6, HM5113805F-6
12
Read Cycle
HM5112805F/HM5113805F
-6
Parameter
Access time from
RAS
Access time from
CAS
Symbol
Min
Max
Unit
Notes
t
RAC
t
CAC
t
AA
t
OEA
t
RCS
t
RCH
t
RCHR
t
RRH
t
RAL
t
CAL
t
CLZ
t
OH
t
OHO
t
OFF
t
OEZ
t
CDD
t
OHR
t
OFR
t
WEZ
t
WED
t
RDD
60
ns
8, 9
15
ns
9, 10, 17
Access time from address
Access time from
OE
30
ns
9, 11, 17
15
ns
9
Read command setup time
Read command hold time to
CAS
Read command hold time from
RAS
Read command hold time to
RAS
Column address to
RAS
lead time
Column address to
CAS
lead time
CAS
to output in low-Z
0
ns
0
ns
12
60
ns
0
ns
12
30
ns
18
ns
0
ns
Output data hold time
Output data hold time from
OE
3
ns
21
3
ns
Output buffer turn-off time
Output buffer turn-off to
OE
CAS
to Din delay time
Output data hold time from
RAS
Output buffer turn-off to
RAS
Output buffer turn-off to
WE
WE
to Din delay time
RAS
to Din delay time
15
ns
13, 21
15
ns
13
15
ns
5
3
ns
21
15
ns
13, 21
15
ns
13
15
ns
15
ns
相關(guān)PDF資料
PDF描述
HM5112805FLTD-6 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5112805FTD-6 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5113805F-6 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5113805FLTD-6 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5113805FTD-6 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HM5112805FLTD-6 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5112805FTD-5 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M EDO DRAM (16-Mword × 8-bit) 8k refresh/4k refresh
HM5112805FTD-6 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5112805LTD-6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM
HM5112805TD-5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM