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參數(shù)資料
| 型號： | HJ772 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進(jìn)步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 44K |
| 代理商： | HJ772 |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6015
Issued Date : 1996.04.12
Revised Date : 2003.01.07
Page No. : 1/4
HJ772
HSMC Product Specification
HJ772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HJ772 is designed for using in output stage of 20 W audio amplifier,
voltage regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
°
C
Junction Temperature ................................................................................................................ +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C)................................................................................................. 10 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................................. -40 V
BVCEO Collector to Emitter Voltage.............................................................................................. -30 V
BVEBO Emitter to Base Voltage...................................................................................................... -5 V
IC Collector Current (DC)................................................................................................................. -3 A
IC Collector Current (Pulse)............................................................................................................. -7 A
IB Base Current (DC)................................................................................................................ -600 mA
Thermal Characteristic
Characteristic
Symbol
R
θ
jc
Max.
12.5
Unit
Thermal Resistance, junction to case
o
C/W
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
-40
-30
-5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-0.3
-1
-
-
80
55
Max.
-
-
-
-1
-1
-0.5
-2
-
500
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-30V, IE=0
VEB=-3V, IC=0
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
VCE=-5V, IC=-0.1A, f=100MHz
VCB=-10V, f=-1MHz, IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE1
Rank
Range
Q
P
E
100-200
160-320
250-500
TO-252
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