參數(shù)資料
型號(hào)： HLB120S
廠商： HSMC CORP.
英文描述： NPN Triple Diffused Planar Type High Voltage Transistors
中文描述： npn型三重?cái)U(kuò)散平面型高壓晶體管
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 58K
代理商： HLB120S
HI-SINCERITY
MICROELECTRONICS CORP.
HLB120S
NPN Triple Diffused Planar Type High Voltage Transistors
Spec. No. : HA200204
Issued Date : 2002.02.01
Revised Date : 2005.02.05
Page No. : 1/4
HLB120S
HSMC Product Specification
Description
The HLB120S is a medium power transistor designed for use in switching
applications.
Features
High Breakdown Voltage
Low Collector Saturation Voltage
Fast Switching Speed
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°
C
Junction Temperature................................................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25
°
C)............................................................................................................... 625 mW
Total Power Dissipation (T
C
=25
°
C)...................................................................................................................... 7 W
Maximum Voltages and Currents (T
=25
°
C)
V
CBO
Collector to Base Voltage ......................................................................................................................... 500 V
V
CEO
Collector to Emitter Voltage...................................................................................................................... 400 V
V
EBO
Emitter to Base Voltage................................................................................................................................ 6 V
I
C
Collector Current (DC) ............................................................................................................................... 100 mA
I
C
Collector Current (Pulse)............................................................................................................................ 200 mA
I
B
Base Current (DC)........................................................................................................................................ 20 mA
I
B
Base Current (Pulse).................................................................................................................................... 40 mA
Electrical Characteristics
(T
A
=25
°
C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
*V
CE(sat)1
*V
CE(sat)2
*V
BE(sat)
*h
FE1
*h
FE2
Min.
500
400
6
-
-
-
-
-
-
8
10
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
10
10
10
400
750
1
-
36
Unit
V
V
V
uA
uA
uA
mV
mV
V
Test Conditions
I
C
=100uA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=450V
V
CE
=400V, I
B
=0
V
EB
=6V, I
C
=0
I
C
=50mA, I
B
=10mA
I
C
=100mA, I
B
=20mA
I
C
=50mA, I
B
=10mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
TO-92
相關(guān)PDF資料
PDF描述
HLB1211 NPN Triple Diffused Planar Type High Voltage Transistors
HLB121A NPN Triple Diffused Planar Type High Voltage Transistor
HLB121D NPN Triple Diffused Planar Type High Voltage Transistor
HLB121J NPN Triple Diffused Planar Type High Voltage Transistor
HLB122D NPN Triple Diffused Planar Type High Voltage Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HLB121 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR
HLB1211 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistors
HLB121A 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistor
HLB121D 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistor
HLB121I 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR
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