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參數(shù)資料
| 型號： | HJ882 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 39K |
| 代理商： | HJ882 |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6014
Issued Date : 1996.04.12
Revised Date : 2003.01.07
Page No. : 1/4
HJ882
HSMC Product Specification
HJ882
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HJ882 is designed for using in output stage of 20 W audio amplifier,
voltage regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
°
C
Junction Temperature ................................................................................................................ +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C)................................................................................................. 10 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................................. 40 V
BVCEO Collector to Emitter Voltage............................................................................................... 30 V
BVEBO Emitter to Base Voltage....................................................................................................... 5 V
IC Collector Current (DC)................................................................................................................... 3 A
IC Collector Current (Pulse)............................................................................................................... 7 A
IB Base Current (DC).................................................................................................................. 600 mA
Thermal Characteristic
Characteristic
Symbol
R
θ
jc
Max
12.5
Unit
Thermal Resistance, junction to case
o
C/W
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
40
30
5
-
-
-
-
30
160
-
-
Typ.
-
-
-
-
-
0.3
1
-
-
90
45
Max.
-
-
-
1
1
0.5
2
-
400
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
VEB=3V, IC=0
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE1
Rank
Range
Q
P
E
100-200
160-320
250-500
TO-252
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