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參數(shù)資料
| 型號： | HLB120A |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN Triple Diffused Planar Type High Voltage Transistors |
| 中文描述： | npn型三重擴散平面型高壓晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 31K |
| 代理商： | HLB120A |
HI-SINCERITY
MICROELECTRONICS CORP.
HLB120A
NPN Triple Diffused Planar Type High Voltage Transistors
Spec. No. : HE6412
Issued Date : 1998.12.01
Revised Date : 2002.01.31
Page No. : 1/3
HLB120A
HSMC Product Specification
Description
The HLB120A is a medium power transistor designed for use in
switching applications.
Features
High Breakdown Voltage
Low Collector Saturation Voltage
Fast Switching Speed
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 625 mW
Total Power Dissipation (Tc=25
°
C) ....................................................................................... 7 W
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage....................................................................................... 600 V
VCEO Collector to Emitter Voltage.................................................................................... 400 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current (DC)............................................................................................... 100 mA
IC Collector Current (Pulse) ........................................................................................... 200 mA
IB Base Current (DC) ....................................................................................................... 20 mA
IB Base Current (Pulse).................................................................................................... 40 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
Min.
600
400
6
-
-
-
-
-
-
8
10
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
10
10
10
400
750
1
-
36
Unit
V
V
V
uA
uA
uA
mV
mV
V
Test Conditions
IC=100uA, IE=0
IC=10mA, IB=0
IE=10uA,, IC=0
VCB=550V
VCE=400V, IB=0
VEB=6V, IC=0
IC=50mA, IB=10mA
IC=100mA, IB=20mA
IC=50mA, IB=10mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
TO-92
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HLB120S | NPN Triple Diffused Planar Type High Voltage Transistors |
| HLB1211 | NPN Triple Diffused Planar Type High Voltage Transistors |
| HLB121A | NPN Triple Diffused Planar Type High Voltage Transistor |
| HLB121D | NPN Triple Diffused Planar Type High Voltage Transistor |
| HLB121J | NPN Triple Diffused Planar Type High Voltage Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HLB120S | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistors |
| HLB121 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR |
| HLB1211 | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistors |
| HLB121A | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistor |
| HLB121D | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistor |
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