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參數(shù)資料
| 型號： | HJ1609 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 31K |
| 代理商： | HJ1609 |
HI-SINCERITY
MICROELECTRONICS CORP.
HJ1609
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6018-B
Issued Date : 1996.04.15
Revised Date : 2000.11.01
Page No. : 1/3
HSMC Product Specification
Description
Low frequency high voltage amplifier.
Complementary pair with HJ1109.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) ................................................................................. 1.25 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... 160 V
BVCEO Collector to Emitter Voltage................................................................................. 160 V
BVEBO Emitter to Base Voltage........................................................................................... 5 V
IC Collector Current (DC) .............................................................................................. 100 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
160
160
5
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
3.8
Max.
-
-
-
10
2
1.5
320
-
-
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=140V, IE=0
IC=30mA, IB=3mA
VCE=5V, IC=10mA
VCE=5V, IC=10mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE1
Rank
Range
B
C
D
60-120
100-200
160-320
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