參數(shù)資料
型號(hào)： HJ210
廠商： HSMC CORP.
英文描述： PNP EPITAXIAL PLANAR TRANSISTOR
中文描述： 進(jìn)步黨外延平面晶體管
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 23K
代理商： HJ210
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6011-B
Issued Date : 1996.03.12
Revised Date : 2000.11.01
Page No. : 1/2
HSMC Product Specification
HJ210
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HJ210 is designed for low voltage, low-power, high-gain audio
amplifier applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) ................................................................................. 12.5 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... -40 V
BVCEO Collector to Emitter Voltage.................................................................................. -25 V
BVEBO Emitter to Base Voltage.......................................................................................... -8 V
IC Collector Current............................................................................................................. -5 A
IB Base Current................................................................................................................... -1 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
Cob
fT
Min.
-40
-25
-8
-
-
-
-
-
-
-
70
45
10
-
65
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-0.3
-0.75
-1.8
-2.5
-1.6
-
180
-
120
-
Unit
V
V
V
nA
nA
V
V
V
V
V
Test Conditions
IC=-100uA, IE=0
IC=-10mA, IB=0
IE=-100uA, IC=0
VCB=-40V, IE=0
VEB=-8V, IC=0
IC=-500mA, IB=-50mA
IC=-2A, IB=-200mA
IC=-5A, IB=-1A
IC=-5A, IB=-1A
VCE=-1V, IC=-2A
VCE=-1V, IC=-500mA
VCE=-1V, IC=-2A
VCE=-2V, IC=-5A
VCB=-10V
VCE=-10V, IC=-100mA, f=10MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
pF
MHz
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