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參數(shù)資料
| 型號： | HJ31C |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 31K |
| 代理商： | HJ31C |
HI-SINCERITY
MICROELECTRONICS CORP.
HJ31C
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6001
Issued Date : 1996.02.26
Revised Date : 2002.07.12
Page No. : 1/3
HJ31C
HSMC Product Specification
Description
The HJ31C is designed for use in general purpose amplifier and
switching applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) ...................................................................................... 15W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................... 3 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
ICES
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
100
100
-
-
-
-
-
25
10
3
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
20
50
1
1.2
1.8
-
50
-
Unit
V
V
uA
uA
mA
V
V
Test Conditions
IC=1mA, IE=0
IC=30mA, IB=0
VCE=100V, VEB=0
VCE=60V, IB=0
VEB=5V, IC=0
IC=3A, IB=375mA
VCE=4V, IC=3A
VCE=4V, IC=1A
VCE=4V, IC=3A
VCE=10V, IC=500mA, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
TO-252
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