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參數(shù)資料
| 型號： | HJ2955 |
| 廠商： | HSMC CORP. |
| 英文描述： | Power Resistor; Series:210; Resistance:2ohm; Resistance Tolerance:+/- 10%; Power Rating:100W; Resistor Element Material:Ceramic; Temperature Coefficient:+/-260 ppm; Leaded Process Compatible:No; Packaging:Bulk RoHS Compliant: No |
| 中文描述： | 進步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 37K |
| 代理商： | HJ2955 |
HI-SINCERITY
MICROELECTRONICS CORP.
HJ2955
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6003
Issued Date : 1994.10.04
Revised Date : 2002.04.03
Page No. : 1/4
HJ2955
HSMC Product Specification
Description
The HJ2955 is designed for general purpose of amplifier and
switching applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature...................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C)..................................................................................... 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -70 V
BVCEO Collector to Emitter Voltage................................................................................... -60 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current ........................................................................................................... -10 A
IB Base Current.................................................................................................................... -6 A
Characteristics
(Ta=25
°
C)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
ICEX
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*hFE1
*hFE2
fT
Min.
-60
-70
-5
-
-
-
-
-
-
-
20
5
2
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-20
-20
-50
-0.5
-1.1
-8
-1.8
100
-
-
Unit
V
V
V
uA
uA
uA
mA
V
V
V
Test Conditions
IC=-30mA, IB=0
IC=-1mA, IE=0
IE=-1mA, IC=0
VCB=-70V, IE=0
VCE=-70V, VEB(off)=-1.5V
VCE=-30V, IB=0
VEB=-5V, IC=0
IC=-4A, IB=-400mA
IC=-10A, IB=-3.3A
IC=-4A, VCE=-4V
IC=-4A, VCE=-4V
IC=-10A, VCE=-4V
VCE=-10V, IC=-500mA, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
TO-252
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