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參數資料
| 型號： | HI6718 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 22K |
| 代理商： | HI6718 |
HI-SINCERITY
MICROELECTRONICS CORP.
HI6718
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE9008-A
Issued Date : 1998.04.10
Revised Date : 2000.11.01
Page No. : 1/2
HSMC Product Specification
Description
The HI6718 is designed for general purpose medium power
amplifier and switching.
Features
High power: 1.2W
High current: 1A
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) .................................................................................... 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... 100 V
BVCEO Collector to Emitter Voltage................................................................................. 100 V
BVEBO Emitter to Base Voltage........................................................................................... 5 V
IC Collector Current.............................................................................................................. 1 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
100
100
5
-
-
80
50
20
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
350
-
250
-
-
20
Unit
V
V
V
nA
mV
Test Conditions
IC=100uA
IC=1mA
IC=10uA
VCB=80V
IC=350mA, IB=35mA
VCE=1V, IC=50mA
VCE=1V, IC=250mA
VCE=1V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
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