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參數(shù)資料
| 型號： | HIRF630 |
| 廠商： | HSMC CORP. |
| 英文描述： | N-Channel MOSFETs |
| 中文描述： | N溝道MOSFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 53K |
| 代理商： | HIRF630 |
HI-SINCERITY
MICROELECTRONICS CORP.
HIRF630
N - Channel MOSFETs
Spec. No. : HE6732-A
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 1/5
HSMC Product Specification
Description
Dynamic dv / dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
This N - Channel MOSFETs provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature..................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) .................................................................................... 74 W
Maximum Voltages and Currents (Tc=25
°
C)
Drain To Source Breakdown Voltage................................................................................ 200 V
Gate To Source Voltage...................................................................................................
±
20 V
Continuous Source Current .................................................................................................. 9 A
Pulsed Drain Current.......................................................................................................... 36 A
Characteristics
(Ta=25
°
C)
Symbol
ID Tc=25
°
C Continuous Drain Current, VGS at 10V
EAS
Single Pulse Avalanche Energy (1)
IAR
Avalanche Current (2)
EAR
Repetitive Avalanche Energy (2)
dv / dt
Peak Diode Recovery dv / dt (3)
Note : V
DD
=50V, starting T
J
=25
°
C, L=4.6mH, R
Q
=25
, I
AS
=9A
Repetitive rating; width limited by max. Junction temperature. I
SD
≤
9A, di/dt
≤
120A / us, V
DD
≤
V
(BR)DSS
, T
J
≤
150
°
C
Parameter
Max.
9
250
9
7.4
5
Units
A
mJ
A
mJ
V / ns
Thermal Resistance
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
Min.
-
-
-
Typ.
-
0.5
-
Max.
1.7
-
62
Units
Junction to Case
Case to Sink, Flat, Greased Surface
Junction to Ambient
°
C/W
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