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參數(shù)資料
| 型號： | HIRF830F |
| 廠商： | HSMC CORP. |
| 英文描述： | N-CHANNEL POWER MOSFET |
| 中文描述： | N溝道功率MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 59K |
| 代理商： | HIRF830F |
HI-SINCERITY
MICROELECTRONICS CORP.
HIRF830 / HIRF830F
N-CHANNEL POWER MOSFET
Spec. No. : MOS200407
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 1/4
HIRF830, HIRF830F
HSMC Product Specification
Description
This N - Channel MOSFETs provide the designer with the best
combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
Features
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Thermal Characteristics
Symbol
Parameter
Value
Units
TO-220AB
TO-220FP
1.71
3.3
R
θ
JC
Thermal Resistance
Junction to Case Max.
°
C/W
R
θ
JA
Thermal Resistance
Junction to Ambient Max.
62
°
C/W
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
Parameter
Value
500
4.5
18
±
20
Units
V
A
A
V
Drain-Source Voltage
Drain to Current (Continuous)
Drain to Current (Pulsed) (*1)
Gate-to-Source Voltage (Continue)
Total Power Dissipation
TO-220AB
TO-220FP
Derate above 25
°
C
TO-220AB
TO-220FP
Single Pulse Avalanche Energy (*2)
Avalanche Current (*1)
Repetitive Avalanche Energy (*1)
Peak Diode Recovery (*3)
Operating Temperature Range
Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/8” from
case for 10 seconds
74
38
W
P
D
0.59
0.3
250
9
7.4
5
W/
°
C
E
AS
I
AR
E
AR
d
v
/d
t
T
j
T
stg
mJ
A
mJ
V/ns
°
C
°
C
-55 to 150
-55 to 150
T
L
300
°
C
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: V
DD
=50V, starting T
=25
°
C, L=24mH, R
G
=25
, I
AS
=4.5A
*3: I
SD
≤
4.5A, di/dt
≤
75A/us, V
DD
≤
V
(BR)DSS
, T
J
≤
150
°
C
HIRF830 Series Pin Assignment
123
123
Tab
3-Lead Plastic
TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
G
D
S
HIRF830 Series Symbol
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