參數(shù)資料
型號(hào)： HI882
廠商： HSMC CORP.
英文描述： NPN EPITAXIAL PLANAR TRANSISTOR
中文描述： 瑞展晶體管
文件頁數(shù)： 1/4頁
文件大?。?/td> 37K
代理商： HI882
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9014
Issued Date : 1996.04.12
Revised Date : 2001.01.25
Page No. : 1/4
HI882
HSMC Product Specification
HI882
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI882 is designed for using in output stage of 10 W audio
amplifier, voltage regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) ..................................................................................... 10 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................... 40 V
BVCEO Collector to Emitter Voltage.................................................................................... 30 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current (DC)...................................................................................................... 3 A
IC Collector Current (Pulse) .................................................................................................. 7 A
IB Base Current (DC) ..................................................................................................... 600 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
40
30
5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
0.3
1
-
-
90
45
Max.
-
-
-
1
1
0.5
2
-
500
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
VEB=3V, IC=0
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE1
Rank
Range
Q
P
E
100-200
160-320
250-500
TO-251
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