參數(shù)資料
型號(hào)： HGTP20N36G3VL
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 功率晶體管
英文描述： 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
中文描述： 37.7 A, 355 V, N-CHANNEL IGBT, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 256K
代理商： HGTP20N36G3VL
2004 Fairchild Semiconductor Corporation
HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1
Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 10mA,
V
GE
= 0V
T
C
= +175
o
C
345
380
415
V
T
C
= +25
o
C
355
385
415
V
T
C
= -40
o
C
355
390
425
V
Collector-Emitter Breakdown Voltage
BV
CER
I
C
= 10mA
V
GE
= 0V
R
GE
= 1k
T
C
= +175
o
C
320
360
395
V
T
C
= +25
o
C
335
365
395
V
T
C
= -40
o
C
335
370
410
V
Gate-Emitter Plateau Voltage
V
GEP
I
C
= 10A
V
CE
= 12V
T
C
= +25
o
C
-
3.7
-
V
Gate Charge
Q
G(ON)
I
C
= 10A
V
GE
= 5V
V
CE
= 12V
T
C
= +25
o
C
-
28.7
-
nC
Collector-Emitter Clamp Breakdown
Voltage
BV
CE(CL)
I
C
= 10A
R
G
= 1K
T
C
= +175
o
C
330
360
415
V
Emitter-Collector Breakdown Voltage
BV
ECS
I
C
= 10mA
T
C
= +25
o
C
28
36
-
V
Collector-Emitter Leakage Current
I
CES
V
CE
= 250V
T
C
= +25
o
C
-
-
5
μ
A
V
CE
= 250V
T
C
= +175
o
C
-
-
250
μ
A
Emitter-Collector Leakage Current
I
ECS
V
EC
= 24V
T
C
= +25
o
C
-
-
1.0
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= 10A
V
GE
= 4.5V
T
C
= +25
o
C
-
1.3
1.6
V
T
C
= +175
o
C
-
1.25
1.5
V
I
C
= 20A
V
GE
= 5.0V
T
C
= +25
o
C
-
1.6
1.9
V
T
C
= +175
o
C
-
1.9
2.4
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 1mA
V
CE
= V
GE
T
C
= +25
o
C
1.1
1.6
2.3
V
Gate Series Resistance
R
1
T
C
= +25
o
C
-
75
-
Gate-Emitter Resistance
R
2
T
C
= +25
o
C
10
20
30
k
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
10V
±
330
±
500
±
1000
μ
A
Gate-Emitter Breakdown Voltage
BV
GES
I
GES
=
±
2mA
±
12
±
14
-
V
Current Turn-Off Time-Inductive Load
t
D(OFF)I
+
t
F(OFF)I
I
C
= 10A, R
G
= 25
,
L = 550μH, R
L
= 26.4
, V
GE
= 5V,
V
CL
= 300V, T
C
= +175
o
C
-
15
30
μ
s
Inductive Use Test
I
SCIS
L = 2.3mH,
V
G
= 5V,
R
G
= 1K
T
C
= +150
o
C
16
-
-
A
T
C
= +25
o
C
21
-
-
A
Thermal Resistance
R
θ
JC
-
-
1.0
o
C/W
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