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參數(shù)資料
| 型號： | HGTP20N36G3VL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs |
| 中文描述： | 37.7 A, 355 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 256K |
| 代理商： | HGTP20N36G3VL |
2004 Fairchild Semiconductor Corporation
HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1
HGTP20N36G3VL,HGT1S20N36G3VLS,
HGT1S20N36G3VL
20A, 360V N-Channel,
Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
JEDEC TO-263AB
JEDEC TO-262AA
Symbol
ECG
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
E
G
COLLECTOR
(FLANGE)
ECG
GATE
R
2
R
1
COLLECTOR
EMITTER
Features
Logic Level Gate Drive
Internal Voltage Clamp
ESD Gate Protection
T
J
= 175
o
C
Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device which is
intended to be used as an ignition coil driver in automotive ignition
circuits. Unique features include an active voltage clamp between
the collector and the gate which provides Self Clamped Inductive
Switching (SCIS) capability in ignition circuits. Internal diodes pro-
vide ESD protection for the logic level gate. Both a series resistor
and a shunt resistor are provided in the gate circuit
.
PACKAGING
The development type number for this device is TA49296.
PART NUMBER
PACKAGE
BRAND
HGTP20N36G3VL
TO-220AB
20N36GVL
HGT1S20N36G3VL
TO-262AA
20N36GVL
HGT1S20N36G3VLS
TO-263AB
20N36GVL
March 2004
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTP20N36G3VL
HGT1S20N36G3VL
HGT1S20N36G3VLS
395
28
37.7
26
±
10
21
16
500
150
1.0
-40 to +175
260
6
UNITS
V
V
A
A
V
A
A
mJ
W
W/
o
C
o
C
o
C
KV
Collector-Emitter Bkdn Voltage At 10mA, R
GE
= 1k
. . . . . . . . . . . . . . . . . . . . . . . BV
CER
Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
ECS
Collector Current Continuous At V
GE
= 5.0V, T
C
= +25
o
C, Figure 7 . . . . . . . . . . . . . I
C25
At V
GE
= 5.0V, T
C
= +100
o
C . . . . . . . . . . . . . . . . . . . .I
C100
Gate-Emitter-Voltage (Note). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Inductive Switching Current At L = 2.3mH, T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . .I
SCIS
At L = 2.3mH, T
C
= +150
o
C . . . . . . . . . . . . . . . . . . . . . .I
SCIS
Collector to Emitter Avalanche Energy At L = 2.3mH, T
C
= +25
o
C . . . . . . . . . . . . . . E
AS
Power Dissipation Total At T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Electrostatic Voltage at 100pF, 1500
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ESD
NOTE: May be exceeded if I
GEM
is limited to 10mA.
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