參數(shù)資料
型號(hào)： HGTD10N50F1S
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 10A, 400V and 500V N-Channel IGBTs
中文描述： 12 A, 500 V, N-CHANNEL IGBT, TO-252AA
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 33K
代理商： HGTD10N50F1S
3-1
HGTD10N40F1, HGTD10N40F1S,
HGTD10N50F1, HGTD10N50F1S
10A, 400V and 500V N-Channel IGBTs
Features
10A, 400V and 500V
V
CE(ON)
2.5V Max.
T
FALL
≤
1.4
μ
s
Low On-State Voltage
Fast Switching Speeds
High Input Impedance
Applications
Power Supplies
Motor Drives
Protective Circuits
Description
The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and
HGTD10N50F1S are n-channel enhancement-mode insu-
lated gate bipolar transistors (IGBTs) designed for high volt-
age, low on-dissipation applications such as switching
regulators and motor drivers. These types can be operated
directly from low power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTD10N40F1
TO-251AA
G10N40
HGTD10N50F1
TO-251AA
G10N50
HGTD10N40F1S
TO-252AA
G10N40
HGTD10N50F1S
TO-252AA
G10N50
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., HGTD10N40F19A.
Packages
HGTD10N40F1, HGTD10N50F1
JEDEC TO-251AA
HGTD10N40F1S, HGTD10N50F1S
JEDEC TO-252AA
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
EMITTER
GATE
C
E
G
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTD10N40F1
HGTD10N40F1S
400
400
±
20
12
10
75
0.6
-55 to +150
HGTD10N50F1
HGTD10N50F1S
500
500
±
20
12
10
75
0.6
-55 to +150
UNITS
V
V
V
A
A
W
W/
o
C
o
C
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CES
Collector-Gate Voltage R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
Collector Current Continuous at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C90
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
March 1997
File Number
2425.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
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PDF描述
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