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參數(shù)資料
| 型號(hào)： | HGTP10N50F1D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
| 中文描述： | 12 A, 500 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大小： | 34K |
| 代理商： | HGTP10N50F1D |
3-28
HGTP10N40F1D, HGTP10N50F1D
FIGURE 9. MAXIMUM OPERATING FREQUENCY vs COLLECTOR
CURRENT AND VOLTAGE (TYPICAL)
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS AT
CONSTANT GATE CURRENT
FIGURE 11. TYPICAL FORWARD VOLTAGE
FIGURE 12. TYPICAL REVERSE RECOVERY TIME
Test Circuit
FIGURE 13. INDUCTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
1000
100
10
1
f
O
,
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
P
D
= ALLOWABLE DISSIPATION
T
J
= +150
o
C, T
C
= +100
o
C, V
GE
= 10V
R
G
= 25
, PT = 75W, L = 50
μ
H
V
CE
= 200V
V
CE
= 400V
f
MAX1
= 0.05/t
D(OFF)I
f
MAX2
= (P
D
- P
C
)/W
OFF
P
C
= CONDUCTION DISSIPATION
NOTE:
500
375
250
125
0
V
C
,
V
G
,
10
5
0
V
CC
= BV
CES
V
CC
= BV
CES
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
COLLECTOR-EMITTER VOLTAGE
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
GATE-
EMITTER
VOLTAGE
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
μ
s)
R
L
= 100
I
G(REF)
= 0.33mA
V
GE
= 10V
100
10
1.0
0.1
I
E
,
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
EC
, EMITTER-COLLECTOR VOLTAGE (V)
T
J
= +150
o
C
T
J
= +100
o
C
T
J
= +25
o
C
T
J
= -50
o
C
dI
EC
/dt
≥
100A/
μ
s
V
R
= 30V, T
J
= +25
o
C
60
50
40
30
20
10
t
R
0
2
4
6
8
10
12
14
16
I
EC
, EMITTER-COLLECTOR CURRENT (A)
20V
0V
R
GEN
= 50
1/R
G
= 1/R
GEN
+ 1/R
GE
R
GE
= 50
L = 50
μ
H
V
400V
+
R
L
-
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