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參數(shù)資料
| 型號(hào)： | HGTP10N50F1D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
| 中文描述： | 12 A, 500 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 34K |
| 代理商： | HGTP10N50F1D |
3-27
HGTP10N40F1D, HGTP10N50F1D
FIGURE 3. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT (TYPICAL)
FIGURE 4. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 5. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE (TYPICAL)
FIGURE 6. TURN-OFF DELAY vs COLLECTOR-TO-EMITTER
CURRENT (TYPICAL)
FIGURE 7. FALL TIME vs COLLECTOR-TO-EMITTER CURRENT
(TYPICAL)
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-
EMITTER CURRENT (TYPICAL)
Typical Performance Curves
(Continued)
4
3
2
1
0
V
C
,
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C
V
GE
= 10V
V
GE
= 15V
V
GE
= 10V
V
GE
= 15V
18
16
14
12
10
8
6
4
2
0
I
C
,
+25
+50
+75
+100
+125
+150
T
C
, CASE TEMPERATURE (
o
C)
1000
800
600
400
200
0
C
0
5
10
15
20
25
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
f = 1MHz
CISS
COSS
CRSS
0.5
0.4
0.3
0.2
0.1
0.0
1
10
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
+150
o
C, V
CE
= 400V
L = 50
μ
H
V
GE
= 15V, R
G
= 50
V
GE
= 10V, R
G
= 50
V
GE
= 15V, R
G
= 25
V
GE
= 10V, R
G
= 25
t
D
,
μ
s
2
1
0
t
F
,
μ
s
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, V
GE
= 10V
R
G
= 25
, L = 50
μ
H
V
CE
= 400V
10
1.0
0.1
W
O
,
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, V
GE
= 10V
R
G
= 25
, L = 50
μ
H
V
CE
= 400V
V
CE
= 200V
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