- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385378 > HGTG34N100E2 (HARRIS SEMICONDUCTOR) LED 5MM VERT SUP DIFF YEL PC MNT PDF資料下載
參數(shù)資料
| 型號： | HGTG34N100E2 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | LED 5MM VERT SUP DIFF YEL PC MNT |
| 中文描述： | 55 A, 1000 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 38K |
| 代理商： | HGTG34N100E2 |
3-127
HGTG34N100E2
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-
EMITTER CURRENT
100
FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER
CURRENT
FIGURE 10. OPERATING FREQUENCY vs COLLECTOR-
EMITTER CURRENT AND VOLTAGE
FIGURE 11. COLLECTOR-EMITTER SATURATION VOLTAGE
Typical Performance Curves
(Continued)
T
J
= +150
o
C
V
GE
= 10V
V
GE
= 15V
5
4
3
2
1
0
V
C
,
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
6
7
100
10
1.0
0.1
W
O
,
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
V
CE
= 400V, V
GE
= 10V AND 15V
V
CE
= 800V, V
GE
= 10V AND 15V
T
J
= +150
o
C, R
G
= 25
,
L = 50
μ
H
1.0
0.0
D
,
μ
s
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
2.0
1.5
0.5
T
J
= +150
o
C
V
CE
= 800V
L = 50
μ
H
V
GE
= 15V, R
G
= 50
V
GE
= 10V, R
G
= 50
V
GE
= 15V, R
G
= 25
V
GE
= 10V, R
G
= 25
10
1
f
O
,
1
10
80
I
CE
, COLLECTOR-EMITTER CURRENT (A)
P
D
= ALLOWABLE DISSIPATION
T
J
= +150
o
C, T
C
= +75
o
C,
R
G
= 25
, L = 50
μ
H
f
MAX1
= 0.05/t
D(OFF)I
f
MAX2
= (P
D
- P
C
)/W
OFF
DUTY FACTOR = 50%
R
θ
JC
= 0.5
o
C/W
NOTE:
V
CE
= 400V
V
GE
= 15V
P
C
= CONDUCTION DISSIPATION
V
CE
= 800V
V
GE
= 15V
100
10
1
I
C
,
1
2
3
4
5
V
CE(ON)
, SATURATION VOLTAGE (V)
6
7
V
GE
= 10V
T
J
= +150
o
C
T
J
= +25
o
C
0
相關PDF資料 |
PDF描述 |
|---|---|
| HGTG40N60A4 | 600V, SMPS Series N-Channel IGBTs(600V, SMPS系列N溝道絕緣柵雙極型晶體管) |
| HGTG40N60B3 | 70A, 600V, UFS Series N-Channel IGBT(70A, 600V，N溝道絕緣柵雙極晶體管) |
| HI-1567CDI | 5V MONOLITHIC DUAL TRANSCEIVERS |
| HI-1567CDIM | 5V MONOLITHIC DUAL TRANSCEIVERS |
| HI-1567CDIT | 5V MONOLITHIC DUAL TRANSCEIVERS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG40N6 | 制造商:HARRIS 制造商全稱:HARRIS 功能描述:70A, 600V, UFS Series N-Channel IGBT |
| HGTG40N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG40N60A4 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG40N60B3 | 功能描述:IGBT 晶體管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG40N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT IC |
發(fā)布緊急采購，3分鐘左右您將得到回復。