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參數(shù)資料
| 型號： | HGTG34N100E2 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | LED 5MM VERT SUP DIFF YEL PC MNT |
| 中文描述： | 55 A, 1000 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 38K |
| 代理商： | HGTG34N100E2 |
3-125
Specifications HGTG34N100E2
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
1000
-
-
V
Collector-Emitter Leakage Voltage
I
CES
V
CE
= BV
CES
T
C
= +25
o
C
-
-
1.0
mA
V
CE
= 0.8 BV
CES
T
C
= +125
o
C
-
-
4.0
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C90
,
V
GE
= 15V
T
C
= +25
o
C
-
2.8
3.2
V
T
C
= +125
o
C
-
2.8
3.1
V
I
C
= I
C90
,
V
GE
= 10V
T
C
= +25
o
C
-
2.9
3.3
V
T
C
= +125
o
C
-
3.0
3.4
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 1mA,
V
CE
= V
GE
T
C
= +25
o
C
3.0
4.5
6.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V
-
-
±
500
nA
Gate-Emitter Plateau Voltage
V
GEP
I
C
= I
C90
, V
CE
= 0.5 BV
CES
-
7.3
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C90
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
185
240
nC
V
GE
= 20V
-
240
315
nC
Current Turn-On Delay Time
t
D(ON)I
L = 50
μ
H, I
C
= I
C90
, R
G
= 25
,
V
GE
= 15V, T
J
= +125
o
C,
V
CE
= 0.8 BV
CES
-
100
-
ns
Current Rise Time
t
RI
-
150
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
-
610
795
ns
Current Fall Time
t
FI
-
710
925
ns
Turn-Off Energy (Note 1)
W
OFF
-
7.1
-
mJ
Current Turn-On Delay Time
t
D(ON)I
L = 50
μ
H, I
C
= I
C90
, R
G
= 25
,
V
GE
= 10V, T
J
= +125
o
C,
V
CE
= 0.8 BV
CES
-
100
-
ns
Current Rise Time
t
RI
-
150
-
ns
Current Turn-Off
t
D(OFF)I
-
460
600
ns
Current Fall Time
t
FI
-
670
870
ns
Turn-Off Energy (Note 1)
W
OFF
-
6.5
-
mJ
Thermal Resistance
R
θ
JC
-
0.5
0.6
o
C/W
NOTE: 1. Turn-Off Energy Loss (W
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A) The HGTG34N100E2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
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