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參數(shù)資料
| 型號： | HGTG32N60E2 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 50 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 33K |
| 代理商： | HGTG32N60E2 |
3-122
HGTG32N60E2
FIGURE 3. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT. (REFER TO APPLICATION
NOTES AN7254 AND AN7260).
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-
EMITTER CURRENT
Typical Performance Curves
(Continued)
60
50
40
30
20
10
0
I
C
,
+25
+50
+75
+100
+125
+150
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
V
GE
= 10V
1.0
0.8
0.6
0.4
0.2
0.0
t
F
,
μ
s
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
V
GE
= 10V AND 15V
T
J
= +150
o
C, R
G
= 25
L = 50
μ
H
V
CE
= 240V
V
CE
= 480V
12000
10000
8000
6000
4000
2000
0
C
0
5
10
15
20
25
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
f = 1MHz
C
ISS
C
OSS
C
RSS
600
450
300
150
0
V
C
,
V
G
,
10
5
0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
μ
s)
GATE-
EMITTER
VOLTAGE
V
CC
= BV
CES
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
I
G(REF)
= 2.75mA
V
GE
= 10V
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
V
CC
= BV
CES
COLLECTOR-EMITTER VOLTAGE
6
5
4
3
2
1
0
V
C
,
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C
V
GE
= 10V
V
GE
= 15V
20
10
1.0
0.1
W
O
,
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C
R
G
= 25
L = 50
μ
H
V
CE
= 240V, V
GE
= 10V, 15V
V
CE
= 480V, V
GE
= 10V, 15V
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