- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385377 > HGTG32N60E2 (HARRIS SEMICONDUCTOR) 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN PDF資料下載
參數(shù)資料
| 型號： | HGTG32N60E2 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 50 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 33K |
| 代理商： | HGTG32N60E2 |
3-121
Specifications HGTG32N60E2
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
600
-
-
V
Collector-Emitter Leakage Voltage
I
CES
V
CE
= BV
CES
T
C
= +25
o
C
-
-
250
μ
A
V
CE
= 0.8 BV
CES
T
C
= +125
o
C
-
-
4.0
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C90
,
V
GE
= 15V
T
C
= +25
o
C
-
2.4
2.9
V
T
C
= +125
o
C
-
2.4
3.0
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 1mA,
V
CE
= V
GE
T
C
= +25
o
C
3.0
4.5
6.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V
-
-
±
500
nA
Gate-Emitter Plateau Voltage
V
GEP
I
C
= I
C90
, V
CE
= 0.5 BV
CES
-
6.5
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C90
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
200
260
nC
V
GE
= 20V
-
265
345
nC
Current Turn-On Delay Time
t
D(ON)I
L = 500
μ
H, I
C
= I
C90
, R
G
= 25
,
V
GE
= 15V, T
J
= +125
o
C,
V
CE
= 0.8 BV
CES
-
100
-
ns
Current Rise Time
t
RI
-
150
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
-
630
820
ns
Current Fall Time
t
FI
-
620
800
ns
Turn-Off Energy (Note 1)
W
OFF
-
3.5
-
mJ
Thermal Resistance
R
θ
JC
-
0.5
0.6
o
C/W
NOTE:
1. Turn-Off Energy Loss (W
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A) The HGTG32N60E2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
100
80
60
40
20
0
I
C
,
0
2
4
6
8
10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 15V
T
C
= +150
o
C
T
C
= +25
o
C
T
C
= -40
o
C
100
90
80
70
60
50
40
30
20
10
0
I
C
,
0
2
4
6
8
10
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
C
= +25
o
C
V
GE
= 15V
V
GE
= 10V
V
GE
= 8.0V
V
GE
= 7.5V
V
GE
= 7.0V
V
GE
= 6.5V
V
GE
= 6.0V
V
GE
= 5.5V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTG34N100E2 | LED 5MM VERT SUP DIFF YEL PC MNT |
| HGTG40N60A4 | 600V, SMPS Series N-Channel IGBTs(600V, SMPS系列N溝道絕緣柵雙極型晶體管) |
| HGTG40N60B3 | 70A, 600V, UFS Series N-Channel IGBT(70A, 600V，N溝道絕緣柵雙極晶體管) |
| HI-1567CDI | 5V MONOLITHIC DUAL TRANSCEIVERS |
| HI-1567CDIM | 5V MONOLITHIC DUAL TRANSCEIVERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG32N60E2R4511 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG32N60ER3431 | 制造商:Harris Corporation 功能描述: |
| HGTG34N100E2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTG40N6 | 制造商:HARRIS 制造商全稱:HARRIS 功能描述:70A, 600V, UFS Series N-Channel IGBT |
| HGTG40N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。