參數(shù)資料
型號: HGTG30N60C3D
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
中文描述: 63 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁數(shù): 6/8頁
文件大?。?/td> 144K
代理商: HGTG30N60C3D
2001 Fairchild Semiconductor Corporation
HGTG30N60C3D Rev. B
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves
(Continued)
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
10
-1
10
-2
SINGLE PULSE
10
0
Z
θ
J
,
10
-1
10
-2
0.5
0.2
0.1
0.05
0.01
0.02
25
o
C
100
o
C
0.5
1.0
1.5
2.5
3.0
I
E
,
V
EC
, FORWARD VOLTAGE (V)
0
2.0
150
o
C
1
10
200
60
40
30
20
10
0
t
r
,
I
EC
, FORWARD CURRENT (A)
50
1
5
10
30
t
rr
t
a
t
b
T
C
= 25
o
C, dI
EC
/dt = 100A/
μ
s
Test Circuit and Waveforms
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
R
G
= 3
L = 100
μ
H
V
DD
= 480V
+
-
RHRP3060
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON
HGTG30N60C3D
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