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參數(shù)資料
| 型號： | HGTG30N60C3D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 63 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 144K |
| 代理商： | HGTG30N60C3D |
2001 Fairchild Semiconductor Corporation
HGTG30N60C3D Rev. B
FIGURE 5. MAX. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
(Continued)
25
50
75
100
125
150
0
10
20
30
40
50
60
70
I
C
,
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
I
S
,
100
250
300
350
450
t
S
,
μ
s
10
11
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
14
15
13
500
400
200
150
I
SC
t
SC
5
10
15
20
25
V
CE
= 360V, R
G
= 25
, T
J
= 125
o
C
t
d
,
10
20
50
40
30
10
20
30
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
V
GE
= 15V
50
60
200
T
J
= 150
o
C, R
G
= 3
, L = 100
μ
H, V
CE(PK)
= 480V
V
GE
= 10V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
500
400
300
200
100
10
20
30
40
50
60
T
J
= 150
o
C, R
G
= 3
, L = 100
μ
H, V
CE(PK)
= 480V
V
GE
= 15V
V
GE
= 10V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
10
100
500
10
20
30
40
50
60
T
J
= 150
o
C, R
G
= 3
, L = 100
μ
H, V
CE(PK)
= 480V
V
GE
= 15V
V
GE
= 10V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
100
10
20
30
40
50
60
200
300
400
500
T
J
= 150
o
C, R
G
= 3
, L = 100
μ
H, V
CE(PK)
= 480V
V
GE
= 15V
V
GE
= 10V
HGTG30N60C3D
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