- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384406 > HGTG30N60C3 (INTERSIL CORP) 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(63A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) PDF資料下載
參數(shù)資料
| 型號： | HGTG30N60C3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(63A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 63 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 99K |
| 代理商： | HGTG30N60C3 |
5
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
M
,
5
10
20
30
40
10
100
500
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 3
, L = 100
μ
H
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θ
JC
= 0.6
o
C/W
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
V
GE
= 15V
V
GE
= 10V
1
60
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
100
200
300
400
500
600
0
50
100
150
200
250
LIMITED BY
CIRCUIT
T
J
= 150
o
C, V
GE
= 15V, L = 100
μ
H
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
1000
2000
3000
4000
5000
6000
7000
8000
C
FREQUENCY = 400kHz
C
IES
C
OES
C
RES
V
G
,
V
C
,
Q
G
, GATE CHARGE (nC)
I
G(REF)
= 3.54mA, R
L
= 20
, T
C
= 25
o
C
0
240
120
360
480
600
15
12
9
6
3
V
CE
= 400V
V
CE
= 200V
V
CE
= 600V
0
0
40
80
120
160
200
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
10
-1
10
-2
SINGLE PULSE
10
0
Z
θ
J
,
10
-1
10
-2
0.5
0.2
0.1
0.05
0.02
0.01
HGTG30N60C3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTG40N60A4 | 600V, SMPS Series N-Channel IGBT |
| HGTG40N60C3 | 75A, 600V, UFS Series N-Channel IGBT |
| HGTG40N60B3 | 70A, 600V, UFS Series N-Channel IGBT |
| HGTG5N120BND | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| HGTP10N40E1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG30N60C3D | 功能描述:IGBT 晶體管 63a 600V NCh IGBT Hyperfast anti-para RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG30N60C3D | 制造商:Fairchild Semiconductor Corporation 功能描述:SINGLE IGBT 600V 63A |
| HGTG30N60C3D_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG32N60E2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG32N60E2R4511 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。