參數(shù)資料
型號: HGTG30N60C3
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(63A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
中文描述: 63 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁數(shù): 4/6頁
文件大小: 99K
代理商: HGTG30N60C3
4
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
(Continued)
t
d
,
10
20
50
30
40
10
20
30
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
V
GE
= 15V
50
60
200
T
J
= 150
o
C, R
G
= 3
, L = 100
μ
H, V
CE(PK)
= 480V
V
GE
= 10V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
500
400
300
200
100
10
20
30
40
50
60
T
J
= 150
o
C, R
G
= 3
, L = 100
μ
H, V
CE(PK)
= 480V
V
GE
= 15V
V
GE
= 10V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
10
100
500
10
20
30
40
50
60
T
J
= 150
o
C, R
G
= 3
, L = 100
μ
H, V
CE(PK)
= 480V
V
GE
= 15V
V
GE
= 10V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
100
10
20
30
40
50
60
200
300
400
500
T
J
= 150
o
C, R
G
= 3
, L = 100
μ
H, V
CE(PK)
= 480V
V
GE
= 15V
V
GE
= 10V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
10
20
30
40
E
O
,
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
50
60
T
J
= 150
o
C, R
G
= 3
, L = 100
μ
H, V
CE(PK)
= 480V
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
10
20
30
40
50
60
1.0
2.0
3.0
4.0
5.0
6.0
0
T
J
= 150
o
C, R
G
= 3
, L = 100
μ
H, V
CE(PK)
= 480V
V
GE
= 10V or 15V
HGTG30N60C3
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