參數(shù)資料
型號： HGTG30N60C3
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(63A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
中文描述： 63 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁數(shù)： 2/6頁
文件大?。?/td> 99K
代理商： HGTG30N60C3
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG30N60C3
600
UNITS
V
Collector To Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate To Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GES
Gate To Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
ARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
63
30
252
±
20
±
30
A
A
A
V
V
60A at 600V
208
1.67
100
-40 to 150
260
4
15
W
W/
o
C
mJ
o
C
o
C
μ
s
μ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 25
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector To Emitter Breakdown Voltage
BV
CES
BV
ECS
I
CES
I
C
= 250
μ
A, V
GE
= 0V
I
C
= 10mA, V
GE
= 0V
V
CE
= BV
CES
V
CE
= BV
CES
I
C
= I
C110
, V
GE
= 15V
600
-
-
V
Emitter To Collector Breakdown Voltage
15
25
-
V
Collector To Emitter Leakage Current
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
-
-
250
μ
A
-
-
2.0
mA
CollectorTo Emitter Saturation Voltage
V
CE(SAT)
-
1.5
1.8
V
-
1.7
2.0
V
Gate To Emitter Threshold Voltage
V
GE(TH)
I
GES
SSOA
I
C
= 250
μ
A, V
CE
= V
GE
V
GE
=
±
20V
T
J
= 150
o
C,
R
G
= 3
,
V
GE
= 15V,
L = 100
μ
H
3.0
5.2
6.0
V
Gate To Emitter Leakage Current
-
-
±
100
nA
Switching SOA
V
CE(PK)
= 480V
V
CE(PK)
= 600V
200
-
-
A
60
-
-
A
Gate To Emitter Plateau Voltage
V
GEP
Q
G(ON)
I
C
= I
C110
, V
CE
= 0.5 BV
CES
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
-
8.1
-
V
On-State Gate Charge
V
GE
= 15V
V
GE
= 20V
-
162
180
nC
-
216
250
nC
Current Turn-On Delay Time
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
R
θ
JC
T
J
= 150
o
C,
I
CE
= I
C110,
V
CE(PK)
= 0.8 BV
CES,
V
GE
= 15V,
R
G
= 3
,
L = 100
μ
H
-
40
-
ns
Current Rise Time
-
45
-
ns
Current Turn-Off Delay Time
-
320
400
ns
Current Fall Time
-
230
275
ns
Turn-On Energy
-
1050
-
μ
J
μ
J
Turn-Off Energy (Note 3)
-
2500
-
Thermal Resistance
-
-
0.6
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). The HGTG30N60C3 was tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total turn-off energy loss. Turn-On losses include
diode losses.
HGTG30N60C3
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG30N60C3D 功能描述:IGBT 晶體管 63a 600V NCh IGBT Hyperfast anti-para RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG30N60C3D 制造商:Fairchild Semiconductor Corporation 功能描述:SINGLE IGBT 600V 63A
HGTG30N60C3D_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
HGTG32N60E2 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTG32N60E2R4511 制造商:Rochester Electronics LLC 功能描述:- Bulk
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