參數(shù)資料
型號(hào): HGTG30N60C3
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(63A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
中文描述: 63 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁數(shù): 3/6頁
文件大小: 99K
代理商: HGTG30N60C3
3
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
I
C
,
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
4
6
8
10
12
0
25
50
75
100
125
150
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
CE
= 10V
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s, DUTY CYCLE <0.5%, T
C
= 25
o
C
0
0
2
4
6
8
10
10.0V
9.5V
9.0V
8.5V
25
50
75
100
125
150
7.5V
8.0V
12.0V
V
GE
= 15.0V
7.0V
I
C
,
0
25
50
0
1
2
3
4
5
75
100
125
150
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= -40
o
C
T
C
= 25
o
C
T
C
= 150
o
C
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
25
50
75
125
150
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
100
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%
V
GE
= 15V
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
25
50
75
100
125
150
0
10
20
30
40
50
60
70
I
C
,
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
I
S
,
100
250
300
350
450
t
S
,
μ
s
10
11
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
14
15
13
500
400
200
150
I
SC
t
SC
5
10
15
20
25
V
CE
= 360V, R
G
= 25
, T
J
= 125
o
C
HGTG30N60C3
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