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參數(shù)資料
| 型號(hào)： | HGT4E20N60A4DS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 70 A, 600 V, N-CHANNEL IGBT, TO-268AA |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大小： | 204K |
| 代理商： | HGT4E20N60A4DS |
2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
0
20
40
60
80
100
0
1
3
4
5
2
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
9
1.7
10
12
1.8
2.0
1.9
11
13
14
15
16
2.1
2.2
V
C
,
I
CE
= 30A
I
CE
= 20A
I
CE
= 10A
DUTY CYCLE < 0.5%, T
J
= 25
o
C
PULSE DURATION = 250
μ
s
0.5
1.0
1.5
2.5
3.0
I
E
,
V
EC
, FORWARD VOLTAGE (V)
0
2.0
0
10
15
20
25
25
o
C
125
o
C
5
30
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%,
60
40
20
0
t
r
,
I
EC
, FORWARD CURRENT (A)
0
80
50
30
10
4
8
16
20
dI
EC
/dt = 200A/
μ
s
125
o
C t
rr
25
o
C t
b
25
o
C t
a
25
o
C t
rr
90
70
12
125
o
C t
a
125
o
C t
b
300
400
500
700
800
t
r
,
di
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
200
600
0
40
10
20
30
50
900
1000
I
EC
= 20A, V
CE
= 390V
125
o
C t
a
125
o
C t
b
25
o
C t
a
25
o
C t
b
600
400
200
0
200
Q
di
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
1000
500
300
400
900
800
600
700
800
25
o
C, I
EC
= 10A
125
o
C, I
EC
= 20A
125
o
C, I
EC
= 10A
25
o
C, I
EC
= 20A
V
CE
= 390V
HGTG20N60A4D, HGT4E20N60A4DS
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