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參數(shù)資料
| 型號： | HGT4E20N60A4DS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 70 A, 600 V, N-CHANNEL IGBT, TO-268AA |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 204K |
| 代理商： | HGT4E20N60A4DS |
2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
0.8
1.2
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
20
40
1.6
2.0
3.2
80
60
T
J
= 125
o
C
T
J
= 150
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 12V
100
T
J
= 25
o
C
0.4
2.4
2.8
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 125
o
C
0
20
40
80
60
100
0
0.8
1.2
1.6
2.0
0.4
2.4
2.8
E
O
,
μ
J
1000
600
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
800
400
1200
0
15
10
20
25
30
35
40
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 3
, L = 500
μ
H, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
200
5
1400
600
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
0
100
400
200
500
700
800
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
300
R
G
= 3
, L = 500
μ
H, V
CE
= 390V
15
10
20
25
30
35
40
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
8
14
16
18
20
22
15
10
20
25
30
35
40
5
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
R
G
= 3
, L = 500
μ
H, V
CE
= 390V
12
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
4
8
20
16
12
24
36
32
28
R
G
= 3
, L = 500
μ
H, V
CE
= 390V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 15V
15
10
20
25
30
35
40
5
HGTG20N60A4D, HGT4E20N60A4DS
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