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參數(shù)資料
| 型號： | HGT4E20N60A4DS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 70 A, 600 V, N-CHANNEL IGBT, TO-268AA |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 204K |
| 代理商： | HGT4E20N60A4DS |
2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
HGTG20N60A4D, HGT4E20N60A4DS
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25
o
C and 150
o
C. The IGBT used is the
development type TA49339. The diode used in anti-parallel
is the development type TA49372.
These IGBT’s are ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential.
These devices have been
optimized for high frequency switch mode power
supplies
.
Formerly Developmental Type TA49341.
Symbol
Features
>100kHz Operation At 390V, 20A
200kHz Operation At 390V, 12A
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . .55ns at T
J
= 125
o
C
Low Conduction Loss
Temperature Compensating
SABER Model
www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
TO-268AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG20N60A4D
TO-247
20N60A4D
HGT4E20N60A4DS
TO-268
20N60A4DS
NOTE: When ordering, use the entire part number.
C
E
G
E
C
G
E
C
G
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,598,461
4,605,948
4,620,211
4,631,564
4,682,195
4,684,413
4,694,313
4,717,679
4,803,533
4,809,045
4,809,047
4,810,665
4,888,627
4,890,143
4,901,127
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
Data Sheet
APRIL 2002
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PDF描述 |
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| HGT4E30N60B3DS | CONNECTOR ACCESSORY |
| HGTG30N60B3D | 2.5V 36-mc CPLD - NOT RECOMMENDED for NEW DESIGN |
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| HGTA32N60E2 | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 100uF; Voltage: 25V; Case Size: 6.3x11 mm; Packaging: Bulk |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT4E30N60B3DS | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60A, 600V, UFS Series N-Channel IGBT |
| HGT4E30N60B3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGT4E30N60C3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGT5A27N120BN | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:72A, 1200V, NPT Series N-Channel IGBT |
| HGT5A40N60A4D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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