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參數(shù)資料
| 型號： | HGT4E20N60A4DS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 70 A, 600 V, N-CHANNEL IGBT, TO-268AA |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 204K |
| 代理商： | HGT4E20N60A4DS |
2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG20N60A4D,
HGT4E20N60A4DS
600
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
70
40
280
±
20
±
30
A
A
A
V
V
100A at 600V
290
2.32
-55 to 150
260
W
W/
o
C
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
600
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= 600V
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
-
-
250
μ
A
-
-
3.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 20A,
V
GE
= 15V
-
1.8
2.7
V
-
1.6
2.0
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
μ
A, V
CE
= 600V
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V,
L = 100
μ
H, V
CE
= 600V
4.5
5.5
7.0
V
Gate to Emitter Leakage Current
I
GES
-
-
±
250
nA
Switching SOA
SSOA
100
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 20A, V
CE
= 300V
-
8.6
-
V
On-State Gate Charge
Q
g(ON)
I
C
= 20A,
V
CE
= 300V
V
GE
= 15V
-
142
162
nC
V
GE
= 20V
-
182
210
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C,
I
CE
= 20A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 3
,
L = 500
μ
H,
Test Circuit Figure 24
-
15
-
ns
Current Rise Time
t
rI
-
12
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
73
-
ns
Current Fall Time
t
fI
-
32
-
ns
Turn-On Energy (Note 3)
E
ON1
-
105
-
μ
J
Turn-On Energy (Note 3)
E
ON2
-
280
350
μ
J
Turn-Off Energy (Note 2)
E
OFF
-
150
200
μ
J
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 125
o
C,
I
CE
= 20A,
V
CE
= 390V, V
GE
= 15V,
R
G
= 3
,
L = 500
μ
H,
Test Circuit Figure 24
-
15
21
ns
Current Rise Time
t
rI
-
13
18
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
105
135
ns
Current Fall Time
t
fI
-
55
73
ns
Turn-On Energy (Note 3)
E
ON1
-
115
-
μ
J
Turn-On Energy (Note 3)
E
ON2
-
510
600
μ
J
Turn-Off Energy (Note 2)
E
OFF
-
330
500
μ
J
HGTG20N60A4D, HGT4E20N60A4DS
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